Microstructure, structure and electrical and dielectric properties of ZnO-doped K0.5Na0.5NbO3 (KNN) ceramics were investigated. Powders were obtained by the conventional solid-state method. Samples doped with 0 to 1 mol% of ZnO were sintered at 1125 °C for 2 h. Through XRD spectra, the perovskite structure was detected, in addition to small peaks corresponding to secondary phases. It was also observed that zinc changed the microstructure and grain size of KNN ceramics. The addition of 0.5 mol% of Zn2+ produced a softening effect in the ferroelectric properties of the material, and increased its final density. Conversely, the addition of 1 mol% of Zn2+ reduced the sample densification.

Integral capacitors (IC) of one or two-layer printed wiring board (PWB) circuits were produced using comb electrodes fixtures and dielectric composites as the inter-electrode material. ICs were fabricated at laboratory scale, using copper comb electrodes and BaTiO3-epoxy composite materials deposited on a glass-Epoxy FR4 board. They were experimentally tested in order to obtain their electrical response. Furthermore, ICs behaviour was modelled through 2-dimensional models applying finite element method (FEM). Results showed that by this laboratory technique it was possible to obtained integral capacitors with low dielectric losses. Moreover, acceptable agreement was found between numerical and experimental capacitance results for all the different analysed ICs. In conclusion, 2D FEM models are a suitable tool to predict electric response of IC devices.

The dielectric behavior of composite materials (epoxy resin - barium titanate and epoxy - CCTO) was analysed as a function of ceramic amount. Composites were prepared by mixing the components and pouring them into suitable moulds. In some compositions, the matrix was reduced by tetrahydrofuran (THF) incorporation. Samples containing various amounts of ceramic filler were examined by TG/DTA and scanning electron microscopy analysis. Dielectric measurements were performed from 20 Hz to 1 MHz and 30 to 120 °C. It was demonstrated that the epoxy - CCTO composites possessed higher permittivity than classic epoxy - BaTiO3 composites. However, the low resin permittivity prevailed in the composite dielectric performance.

Gas sensors based in semiconductor oxides show a change in the resistance when they are exposed to certain gaseous atmospheres. In this paper, the influence on the sensor electrical resistance with the film thickness in vacuum and air are studied. The conduction process is analyzed considering the existence of Schottky potential barriers at the grain boundaries. These barriers are affected by the intergranular gas diffusion. This process increases the barrier height and width, altering the electrical resistance. Also, the influence of the diffusion process on the stabilization time is analized.